| 摘要 |
PROBLEM TO BE SOLVED: To provide a technology capable of improving linearity between a load to be applied and a resistance changing rate, in a force detection device utilizing a mesa level difference. SOLUTION: This force detection device 10 is equipped with a semiconductor substrate 20 having a groove group domain 40 wherein a plurality of grooves 44a, 44b are formed, a force transfer block 50 covering the groove group domain 40, and impurity introduction domains 34, 35, 36 extending from one side out of the groove group domain 40 to the other side out of the groove group domain 40 through the mesa level difference 42 between the groove 44a and the groove 44b in the groove group domain 40. The impurity introduction domain 35 is characterized by being formed on a domain other than a corner part positioned between a side face S and a top face T of the mesa level difference 42. COPYRIGHT: (C)2008,JPO&INPIT
|
