| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for polishing a semiconductor wafer without polishing the semiconductor wafer unduly in degrading overall planarity or local planarity, in the edge region of the semiconductor wafer. <P>SOLUTION: The method for polishing the semiconductor wafer 1 between an upper polishing plate 3 and a lower polishing plate 4, the semiconductor wafer is polished on both sides while lying in a recess of carriers 21 and 22 by supplying a polishing agent. The method includes: a first polishing step of double-side polishing the wafer, the first step being concluded with a negative overhang that is defined as the difference between the thickness of the wafer and the thickness of the carrier after the first polishing step; and a second polishing step of double-side polishing the wafer, in which less than 1 μm of a material is removed from one surface of the wafer. <P>COPYRIGHT: (C)2008,JPO&INPIT |
