| 摘要 |
<p>The present invention provides a semiconductor device and an electric apparatus each of which can realize both high-speed switching operation and energy loss reduction and excels in resistance to current concentration based on a counter electromotive voltage generated by, for example, an inductance load of the electric apparatus. A semiconductor device (100) of the present invention includes: a semiconductor layer (3) made of a first conductivity type wide band-gap semiconductor; a transistor cell (101T) in which a vertical field effect transistor (102) is formed, the vertical field effect transistor (102) causing a charge carrier to move in a thickness direction of the semiconductor layer (3); and a diode cell (101S) in which a schottky diode (103) is formed, the schottky diode (103) being formed such that a schottky electrode (9) forms a schottky junction with the semiconductor layer (3), wherein the semiconductor layer 3 is divided into a plurality of square subregions (101T and 101S) based on virtual border lines (30) in plan view, and includes the subregion (101T) as the transistor cell and the subregion (101S) as the diode cell.</p> |
