NON-VOLATILE MEMORY CELL USING MECHANICAL SWITCH AND METHOD OF DRIVING THEREOF

摘要

A non-volatile memory cell using a mechanical switch and an operating method thereof are provided to perform reading, writing and erasing operation by using one mechanical switch and one FET. A source(102) and a drain(103) are spaced apart from each other in a substrate(101), and an insulating layer(104) is formed on the substrate. A floating gate(105) is formed on the surface of the insulating layer between the source and the drain. A selection gate(106) is formed on the surface of the insulating layer between the source and the drain, and is spaced apart from one side of the floating gate. A control gate(107) is formed on the surface of the insulating layer, and is spaced apart from the other side of the floating gate. A moving electrode(108) applies a potential of the selection gate to the floating gate.