发明名称 |
Method for correcting a mask pattern, a computer program product, a method for producing a photomask, and method for manufacturing a semiconductor device |
摘要 |
A computer implemented method for correcting a mask pattern, includes: preparing a designed mask pattern; obtaining a rough corrected mask pattern from the designed mask pattern by applying a rough correction; and obtaining a precision corrected mask pattern from the rough corrected mask pattern by applying a precision correction using a model based correction method with a precision model that simulates a transferred image of an exposure apparatus. |
申请公布号 |
US7353145(B2) |
申请公布日期 |
2008.04.01 |
申请号 |
US20020307968 |
申请日期 |
2002.12.03 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
TANAKA SATOSHI;INOUE SOICHI |
分类号 |
G03F1/08;G06F7/60;G03F1/00;G03F1/14;G03F1/36;G03F1/68;G03F7/20;G05B19/18;G06F17/50;H01L21/027 |
主分类号 |
G03F1/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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