发明名称 Method for correcting a mask pattern, a computer program product, a method for producing a photomask, and method for manufacturing a semiconductor device
摘要 A computer implemented method for correcting a mask pattern, includes: preparing a designed mask pattern; obtaining a rough corrected mask pattern from the designed mask pattern by applying a rough correction; and obtaining a precision corrected mask pattern from the rough corrected mask pattern by applying a precision correction using a model based correction method with a precision model that simulates a transferred image of an exposure apparatus.
申请公布号 US7353145(B2) 申请公布日期 2008.04.01
申请号 US20020307968 申请日期 2002.12.03
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 TANAKA SATOSHI;INOUE SOICHI
分类号 G03F1/08;G06F7/60;G03F1/00;G03F1/14;G03F1/36;G03F1/68;G03F7/20;G05B19/18;G06F17/50;H01L21/027 主分类号 G03F1/08
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