发明名称 |
Method of manufacturing a semiconductor device |
摘要 |
The number of masks is reduced in a method of manufacturing a semiconductor device that has a transistor and a photoelectric conversion element on an insulating surface. In a manufacturing method of the present invention, semiconductor layers functioning as a source region, a drain region, and a channel formation region of a transistor are formed at the same time an n type semiconductor layer and p type semiconductor layer of a photoelectric conversion element are formed. Connection wiring lines to be electrically connected to the n type semiconductor layer and p type semiconductor layer of the photoelectric conversion element are formed at the same time a source wiring line and a drain wiring line of a transistor are formed. In a doping step using an impurity element that gives one conductivity type, a semiconductor layer of an n-channel transistor and the n type semiconductor layer of the photoelectric conversion element are simultaneously doped with the impurity element and a semiconductor layer of a p-channel transistor and the p type semiconductor layer of the photoelectric conversion element are simultaneously doped with the impurity element. |
申请公布号 |
US7351605(B2) |
申请公布日期 |
2008.04.01 |
申请号 |
US20040994390 |
申请日期 |
2004.11.23 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YONEZAWA MASATO;KIMURA HAJIME;YAMAZAKI YU;KOYAMA JUN;WATANABE YASUKO |
分类号 |
H01L21/00;H01L21/77;H01L27/12;H01L27/146;H01L29/786;H01L31/062;H01L31/12 |
主分类号 |
H01L21/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|