| 摘要 |
The invention concerns a matrix structure of multispectral detectors ( 200 ) comprising: a superimposition of several layers of semiconductor material separated by layers of dielectric material transparent to a light to be detected, said superimposition offering a face for receiving the light to be detected, said superimposition of layers of semiconductor material being spread out in picture elements or pixels, each part of the layer of semiconductor material corresponding to a pixel comprising a light detection element delivering electrical charges in response to the light received by said detection element, means for collecting the electrical charges delivered by each light detection element, said collection means being electrically connected to electrical connection means ( 153 ) and comprising conductive walls ( 151 ).
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