MULTI-LAYER PATTERN FORMING METHOD USING NANO-IMPRINT PROCESS
摘要
<p>A multi-layer pattern forming method using a nano-imprint process is provided to enhance productivity by simplifying a semiconductor manufacturing process. A plurality of stamps having concavo-convex parts corresponding to patterns are prepared. A target material for forming the patterns is formed on an upper surface of a substrate. A mask material is deposited on an upper surface of the target material. One of the stamps is compressed on the mask material. The mask material is hardened. The stamps are removed. The target material is patterned by using the mask material corresponding to shapes of the stamps. The mask material is removed. An insulating layer is formed on the structure. The prior processes are performed repeatedly by applying the stamps.</p>
