| 摘要 |
A method for forming a capacitor in a semiconductor device is provided to prevent deterioration of a device characteristic by removing a sharp point formed on an upper portion of a bottom electrode at a process of separating the bottom electrode. A substrate(110) with a sacrificial pattern layer(114) is prepared, and then a bottom electrode material is formed along a stepped surface formed by the sacrificial pattern layer. A buffer layer is formed on an upper portion of the bottom electrode material. The bottom electrode material and the buffer layer are etched through a first etch process to form a bottom electrode(116A). A sharp point formed on the bottom electrode is removed by subjecting a second etch process having etch selectivity between the bottom electrode, the sacrificial pattern layer and the buffer layer. The sacrificial pattern layer and the buffer layer are removed.
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