发明名称 Back contact device for photovoltaic cells and method of manufacturing a back contact device
摘要 One or more embodiments of the presently described invention provide a method for fabricating an all-back contact photovoltaic cell. The method includes the steps of depositing a semiconductor layer on a non-opaque substrate, increasing a level of crystallinity of the semiconductor layer by exposing it to a focused beam of energy, doping the semiconductor layer with first and second dopants on one side to create at least two doped regions, and providing electrical contacts to the doped regions by depositing a conductive layer on the semiconductor layer so that the electrical contacts are on the same side of the semiconductor layer while incident light strikes the layer from an opposing side.
申请公布号 US2008072953(A1) 申请公布日期 2008.03.27
申请号 US20070903787 申请日期 2007.09.25
申请人 THINSILICON CORP. 发明人 STEPHENS JASON M.;COAKLEY KEVIN MICHAEL;HUSSEN GULEID
分类号 H01L31/042 主分类号 H01L31/042
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