| 发明名称 |
SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD |
| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which can avoid adverse effects on the quality of an insulating film (such as a gate insulating film) previously formed and can bury the less-defect insulating film in a trench, and also to provide a method of manufacturing the semiconductor device. SOLUTION: The method of manufacturing the semiconductor device includes steps of resolving a reactive gas and burying an insulating film in a trench of a substrate. The reactive gas and a diluent gas containing at least a D<SB>2</SB>(deuterium) gas are supplied to bury the insulating film. COPYRIGHT: (C)2008,JPO&INPIT
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| 申请公布号 |
JP2008071888(A) |
申请公布日期 |
2008.03.27 |
| 申请号 |
JP20060248347 |
申请日期 |
2006.09.13 |
| 申请人 |
TOSHIBA CORP |
发明人 |
NISHITANI KAZUTO;NISHIMURA HIROSHI;MATSUBA HIROSHI |
| 分类号 |
H01L21/316;C23C16/505;H01L21/76;H01L21/8247;H01L27/115;H01L29/78;H01L29/788;H01L29/792 |
主分类号 |
H01L21/316 |
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