| 摘要 |
A semiconductor device comprises a semiconductor substrate. A plurality of first semiconductor regions are formed in a single crystal semiconductor layer of a first conduction type disposed on a surface of the semiconductor substrate as defined by a plurality of trenches provided in the single crystal semiconductor layer. A plurality of insulating regions are respectively formed on bottoms in the trenches. A plurality of second semiconductor regions are formed of a single crystal semiconductor layer of a second conduction type buried in the trenches in the presence of the insulating regions formed therein. The first semiconductor regions and second semiconductor regions are arranged alternately in a direction parallel to the surface of the semiconductor substrate. |
