发明名称 Memory circuit with automatic precharge function, and integrated circuit device with automatic internal command function
摘要 A memory circuit requiring refresh operations a first circuit which receives a command in synchronization with a clock signal, and which generates a first internal command internally and a second circuit which generates a second internal command, e.g., a refresh command, internally in a prescribed refresh cycle. And an internal circuit, according to said first internal command, executes corresponding control through clock-synchronous operations, and when said refresh command is issued, sequentially executes control corresponding to the refresh command and control corresponding to said first internal command through clock-asynchronous operations. When a refresh timing signal is generated, the refresh operation can be intrupted among the external command operations.
申请公布号 US7349280(B2) 申请公布日期 2008.03.25
申请号 US20070790831 申请日期 2007.04.27
申请人 发明人
分类号 G11C7/00 主分类号 G11C7/00
代理机构 代理人
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