发明名称 |
Device having enhanced stress state and related methods |
摘要 |
The present invention provides a semiconductor device having dual nitride liners, which provide an increased transverse stress state for at least one FET and methods for the manufacture of such a device. A first aspect of the invention provides a method for use in the manufacture of a semiconductor device comprising the steps of applying a first silicon nitride liner to the device and applying a second silicon nitride liner adjacent the first silicon nitride liner, wherein at least one of the first and second silicon nitride liners induces a transverse stress in a silicon channel beneath at least one of the first and second silicon nitride liner.
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申请公布号 |
US7348635(B2) |
申请公布日期 |
2008.03.25 |
申请号 |
US20040905025 |
申请日期 |
2004.12.10 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHIDAMBARRAO DURESETI;LI YING;MALIK RAJEEV;NARASIMHA SHREESH;YANG HAINING;ZHU HUILONG |
分类号 |
H01L31/00 |
主分类号 |
H01L31/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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