| 摘要 |
728,223. Semi-conductor devices. WESTERN ELECTRIC CO., Inc. Nov. 16, 1951 [Nov. 30, 1950], No. 26909/51. Class 37. A translating device comprises a semi-conductor body and a seamless insulating envelope which retains electrodes in contact with the body, one of the electrodes having a flexible portion in a cavity within the envelope, the cavity being filled with fluid material. The unit may be constructed by soldering or welding a base electrode 13 to the semi-conductor body 12, the electrode having a spade end 27 which is bent round to form a pocket. The contact 23 having an S-bend is then placed in position, and a globule of material which will remain soft at the operating temperature, such as paraffin or polyethylene polyisobutylene is applied to encompass the point and one bend. A quick-drying vinyl lacquer is then applied to form a crust 28 over the globule. A bead of material such as a styrene-polyester casing resin, e.g. " Selectron," with or without a silica loading, is then applied over the whole assembly and cured. The contact wires may then be bent around the unit, and a second coating applied to give additional strength. The construction may be applied to a diode used as a rectifier or, with suitable translucent encasing material, as a photo-electric device, or to a transistor employing two closely spaced electrodes 23 operating as emitter and collector. The emitter may consist of beryllium copper, and the collector of phosphor bronze material. The surface of the semi-conductor may be etched by means of a solution containing acetic acid, nitric acid, hydrofluoric acid and liquid bromine. Specifications 670,730, [Group XL (b)], and 694,021 are referred to. |
