| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device enabling to suppress spatial separation between electrons and holes, and a method of manufacturing the semiconductor device. <P>SOLUTION: An ultraviolet light emitting diode is configured in such a way that AlN is deposited on a sapphire substrate, an n-Al<SB>0.8</SB>Ga<SB>0.2</SB>N layer is deposited thereon, a superlattice layer having a barrier layer made of In<SB>0.13</SB>Al<SB>0.87</SB>N and a well layer made of Al<SB>0.58</SB>Ga<SB>0.42</SB>N layer is deposited as an active layer thereon, a p-Al<SB>0.8</SB>Ga<SB>0.2</SB>N layer is deposited thereon, a Pd/Au electrode is formed on the p-Al<SB>0.8</SB>Ga<SB>0.2</SB>N layer, and a Ti/Al/Ni/Au electrode is formed on an n-Al<SB>0.8</SB>Ga<SB>0.2</SB>N layer. <P>COPYRIGHT: (C)2008,JPO&INPIT |
