| 摘要 |
PROBLEM TO BE SOLVED: To provide a silicon single crystal wafer that is superior in TZDB (Time Zero Dielectric Breakdown) characteristics and TDDB (Time Dependent Dielectric Breakdown) characteristics in a wafer surface layer area as a device fabrication area, and is less varied in BMD density in the wafer surface, and also to provide a method of manufacturing the same. SOLUTION: The silicon single crystal wafer grown by CZ method is doped with nitrogen, and its entire surface is N- area. The non-defective rate of those with TZDB and TDDB characteristics is 90% or more, and the maximum value of BMD density in the wafer surface after gettering heat treatment or device heating treatment is 50 times or less its minimum value. When the silicon single crystal wafer is grown by the CZ method, it is pulled up under such a condition that the crystal entire surface becomes an N- area while it is being doped with nitrogen with a concentration of≥5×10<SP>11</SP>atoms/cm<SP>3</SP>and≤3×10<SP>13</SP>atoms/cm<SP>3</SP>, and oxygen with a concentration of≥8 ppma and <13 ppma (JEIDA), so as to manufacture the silicon single crystal wafer. COPYRIGHT: (C)2008,JPO&INPIT
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