NONVOLATIBLE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME

摘要

A nonvolatile memory device and a method for fabricating the same are provided to prevent mis-alignment due to photolithography by implementing a spacer typed floating gate at a protruded source region. A nonvolatile memory device includes a source region(160) and a memory transistor. The source region is formed by extruding at an active region of a semiconductor substrate. The memory transistor includes a floating gate(110b), a dielectric(112b), and a control gate(114b). The floating gate is formed by arranging at a side wall of the source region. The dielectric is formed on the floating gate by overlapping with a part of the source region. The control gate is formed on the dielectric.