发明名称 PATTERNED STRUCTURE AND PATTERN FORMING METHOD
摘要 <P>PROBLEM TO BE SOLVED: To provide a patterned structure and a pattern forming method by which a microscopic resist pattern having a high aspect ratio can be formed on a glass or film. <P>SOLUTION: The pattern forming method includes exposing and developing a photosensitive resist material 13B to form a patterned layer 15, wherein before a step of applying the photosensitive resist material 13B on a substrate 11, an underlayer 13A comprising the same or another photosensitive resist material is formed on the substrate. By preparing the underlayer 13A as a base for the patterned layer 15, adhesion between the substrate 11 and the patterned layer 15 is enhanced and the microscopic patterned layer 15 having a high aspect ratio can be formed. In order to enhance adhesion between the substrate 11 and the underlayer 13A, an adhesive layer 12 comprising HMDS (hexamethyldisilazane) is preferably interposed. <P>COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008064812(A) 申请公布日期 2008.03.21
申请号 JP20060239706 申请日期 2006.09.05
申请人 SONY CORP 发明人 SATO HARUMI;OKUYAMA KENTARO
分类号 G03F7/11;G03F7/09;H01L21/027 主分类号 G03F7/11
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