| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nitride semiconductor device capable of improving the luminous efficiency and the ESD properties of the device. <P>SOLUTION: This nitride semiconductor device comprises an n-type nitride semiconductor layer 220, an electron emitting layer 230 comprising a nitride semiconductor layer including a tertiary group transition element, formed on the n-type nitride semiconductor layer, an active layer 240 formed on the electron emitting layer, and a p-type nitride semiconductor layer 250 formed on the active layer. It is preferable that the electron emission layer comprise at least one layer of Ga<SB>x</SB>Sc<SB>(1-x)</SB>N/Al<SB>y</SB>Ga<SB>(1-y)</SB>N(0≤x<1, 0≤y<1). <P>COPYRIGHT: (C)2008,JPO&INPIT |
