| 摘要 |
PROBLEM TO BE SOLVED: To provide a wiring correction method with which coverage can be kept excellent. SOLUTION: In the wiring correction method for forming a connecting hole 1 through converged ion beam working for pulling out correction wiring of a semiconductor device 11, a slope is formed at a side where the correction wiring for connecting lower-layer wiring 4 and upper-layer wiring 3 is pulled put on a lateral side of the connecting hole 1. COPYRIGHT: (C)2008,JPO&INPIT
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