| 摘要 |
PROBLEM TO BE SOLVED: To provide a functional device, such as field effect transistors which hardly have disconnections or short circuits of electrodes, and has high reliability and small parasitic capacitance and has superior frequency characteristics. SOLUTION: The field effect transistor comprises an insulating substrate, a first electrode which has a convex portion and is formed on the substrate, an insulating film which covers the top and side faces of the convex portion, second and third electrodes formed on the substrate surface on the side of one side face of the convex portion, a fourth electrode formed on the top face of the convex portion via the insulting film, and a semiconductor layer which is in contact with the second, third, and fourth electrodes but is separated from the first electrode by the insulating film. COPYRIGHT: (C)2008,JPO&INPIT
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