| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To form a convexo-concave pattern without an AlGaN intermediate layer to solve problems that, due to the difference in the behavior of translocation in a crystal, the translocation is not flexed but it penetrates to the surface of a GaN layer; and flattening of the surface of the GaN layer is affected, for example, a pit is not blocked. <P>SOLUTION: This epitaxial substrate comprises a substrate for semiconductor growth, a first gallium nitride layer formed on a principal plane of the substrate for semiconductor growth, and a second gallium nitride layer formed on the first gallium nitride layer. An a-plane or an m-plane of the first gallium nitride layer is parallel to the principal plane of the substrate for semiconductor growth. The interface of the first gallium nitride layer and the second gallium nitride layer is not parallel to the principal plane of the substrate for semiconductor growth. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
