METHOD FOR SEPARATING SURFACE LAYER OR GROWTH LAYER OF DIAMOND

摘要

This invention provides a method for separating a surface layer of diamond, characterized by comprising implanting ions into diamond to form a nondiamond layer in a part around the surface of the diamond, then applying an alternating current across electrodes in an electrolysis solution to etch the nondiamond layer of the diamond. There is also provided a method for separating a growth layer of diamond, comprising the step of, after the formation of the nondiamond layer by the above method, further growing diamond by a gaseous phase synthesis method. The above method can be applied to various single crystal and polycrystalline diamonds. In particular, even a large single crystal diamond, a part of the single crystal diamond can be separated in a reutilizable form in a relatively short time with high efficiency.