发明名称 |
FLASH MEMORY DEVICE, METHOD OF OPERATING A FLASH MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME DEVICE |
摘要 |
A flash memory device includes a semiconductor substrate having a field oxide layer defining an active area; a gate oxide layer formed over parts of the active area of the semiconductor substrate; a coupling oxide layer formed over both the semiconductor substrate and a sidewall of the polygate; a floating gate formed over the coupling oxide layer; and a source/drain area formed in an external lower semiconductor substrate of the planar floating gate.
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申请公布号 |
US2008062759(A1) |
申请公布日期 |
2008.03.13 |
申请号 |
US20070844510 |
申请日期 |
2007.08.24 |
申请人 |
JUNG JIN-HYO |
发明人 |
JUNG JIN-HYO |
分类号 |
G11C11/34;H01L21/336;H01L29/788 |
主分类号 |
G11C11/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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