发明名称 MEMORY DEVICE AND METHOD FOR PRECHARGING MEMORY DEVICE
摘要 A memory device and a method for precharging the memory device are provided to increase integration density as enabling high speed operation, by precharging an input stage of a sense amplifier using a plurality of precharge parts and multiplexers. A signal transmission apparatus includes signal line pairs, precharge elements(610,620,630), a sense amplifier(650) and a multiplexer(640). The precharge parts precharge the signal line pairs. The multiplexer connects one signal line pair to the sense amplifier during signal transmission period, and connects more than two signal line pairs to the sense amplifier during preparation period.
申请公布号 KR20080022737(A) 申请公布日期 2008.03.12
申请号 KR20060086289 申请日期 2006.09.07
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 JUNG, JONG HOON;SEO, DONG WOOK
分类号 G11C7/06;G11C5/14;G11C7/08 主分类号 G11C7/06
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