| 发明名称 |
MOSFET package |
| 摘要 |
A semiconductor device, wherein a first metallic member is bonded to a first electrode of a semiconductor element via a first metallic body containing a first precious metal, and a second metallic member is bonded to a second electrode via a second metallic body containing a second precious metal.
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| 申请公布号 |
US7342267(B2) |
申请公布日期 |
2008.03.11 |
| 申请号 |
US20060415290 |
申请日期 |
2006.05.02 |
| 申请人 |
RENESAS TECHNOLOGY CORP.;HITACHI TOHBU SEMICONDUCTOR, LTD. |
发明人 |
KAJIWARA RYOICHI;KOIZUMI MASAHIRO;MORITA TOSHIAKI;TAKAHASHI KAZUYA;KISHIMOTO MUNEHISA;ISHII SHIGERU;HIRASHIMA TOSHINORI;TAKAHASHI YASUSHI;HATA TOSHIYUKI;SATO HIROSHI;OOKAWA KEIICHI |
| 分类号 |
H01L21/60;H01L29/94;H01L21/00;H01L21/56;H01L23/485;H01L23/495;H01R9/00 |
主分类号 |
H01L21/60 |
| 代理机构 |
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