发明名称 |
SEMICONDUCTOR THIN FILM, THIN FILM TRANSISTOR, MANUFACTURING METHODS FOR THESE, AND APPARATUS FOR MANUFACTURING SEMICONDUCTOR THIN FILM |
摘要 |
<p><P>PROBLEM TO BE SOLVED: To obtain a semiconductor thin film with a small crystal grain diameter, having crystal grains aligned in a shape of a grid with equal intervals, a thin film transistor, manufacturing methods therefor, and an apparatus for manufacturing the semiconductor thin film. <P>SOLUTION: The semiconductor thin film is multi-crystallized by irradiating a laser beam 12 onto its amorphous semiconductor thin film. The semiconductor thin film has crystal grains 6 aligned in a grid shape. Further, the size of the crystal grain 6 is about half as much as the laser beam 12's oscillation wavelength. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
申请公布号 |
JP2008053642(A) |
申请公布日期 |
2008.03.06 |
申请号 |
JP20060231054 |
申请日期 |
2006.08.28 |
申请人 |
MITSUBISHI ELECTRIC CORP |
发明人 |
TAKEGUCHI TORU;YURA SHINSUKE |
分类号 |
H01L21/20;G02F1/136;G02F1/1368;H01L21/336;H01L29/786 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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