发明名称 Method for Manufacturing Semiconductor Device
摘要 The present invention offers a method for forming an opening portion by a simple process without using a photomask or a resist. Further, the present invention proposes a method for manufacturing a semiconductor device at low cost. A plurality of light absorbing layers is formed over a substrate, an interlayer insulating layer is formed over the plurality of light absorbing layers, the plurality of light absorbing layers is irradiated with a linear or rectangular laser beam from the interlayer insulating layer side, and at least the interlayer insulating layer which is over the plurality of light absorbing layers is removed and an opening portion is formed; and accordingly, a plurality of opening portions can be formed by removing the plurality of light absorbing layers and an insulating film formed over the plurality of light absorbing layers.
申请公布号 US2008057632(A1) 申请公布日期 2008.03.06
申请号 US20070843745 申请日期 2007.08.23
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 ARAI YASUYUKI;TANAKA KOICHIRO;SUZUKI YUKIE
分类号 H01L21/84 主分类号 H01L21/84
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