| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of forming an insulation film for semiconductor devices, especially, a tantalum oxide film for gate insulation films and capacitance insulation films, etc. of semiconductor devices, which has a high reaction speed even at low growth temperatures and a high productivity. SOLUTION: A tantalum nitride film formed by CVD, etc. in a temperature range of 200-400°C is thermally oxidized by the wet oxidizing method to form an insulation film, i.e., a tantalum oxide film having a laminate structure of a non-stoichiometric composition film, and a stoichiometric composition film having an amorphous structure. COPYRIGHT: (C)2008,JPO&INPIT
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