| 摘要 |
PROBLEM TO BE SOLVED: To crystal-grow a flat non-polarity nitride semiconductor layer having high quality without interposing a low-temperature buffer layer between a sapphire substrate and the nitride semiconductor layer. SOLUTION: The method of forming a nitride semiconductor layer includes a step of applying nitride processing to one main surface of the sapphire substrate, a step of crystal-growing a first nitride semiconductor layer on the surface of the nitride-processed substrate on the basis of a first growing condition, and a step of crystal-growing a second nitride semiconductor layer on the first nitride semiconductor layer on the basis of a second growing condition different from the first growing condition. COPYRIGHT: (C)2008,JPO&INPIT
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