发明名称 PATTERN FORMING METHOD
摘要 <p>There are provided a coating material which improves an etching resistance of a pattern in an etching process using a pattern formed on a substrate as a mask. The material is a pattern coating material for an etching process using a pattern formed on a substrate as a mask, including a metal compound (W) which can produce a hydroxyl group on hydrolysis.</p>
申请公布号 EP1895576(A1) 申请公布日期 2008.03.05
申请号 EP20060766824 申请日期 2006.06.16
申请人 TOKYO OHKA KOGYO CO., LTD.;RIKEN 发明人 MATSUMARU, SHOGO;OGATA, TOSHIYUKI;ISHIKAWA, KIYOSHI;HADA, HIDEO;FUJIKAWA, SHIGENORI;KUNITAKE, TOYOKI
分类号 G03F7/40;H01L21/3065 主分类号 G03F7/40
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