| 摘要 |
A method for fabricating a semiconductor device is provided to prevent the depletion of gate by closely arranging the dopant areas of source and drain regions in a semiconductor substrate. A gate insulating layer and a polysilicon layer are sequentially stacked on an active region of a semiconductor substrate. A photoresist layer(140) is formed on the polysilicon layer. By etching the gate insulating and polysilicon layers, a gate stack is formed. Then, a first n-type dopant ion implantation is executed to form a shallow first dopant area(160) in the semiconductor substrate. Gate spacer films(150,180) are formed at a part of the gate stack and then a second n-type dopant ion implantation is executed to form a deep second dopant area(170) in the semiconductor substrate using the gate spacer films as a mask.
|
