Method of manufacturing a semiconductor device

摘要

The present invention is related to a method of producing a semiconductor device and the resulting device. The method is suitable in the first place for producing high power devices, such as High Electron Mobility Transistors (HEMT), in particular HEMT-devices with multiples source-gate-drain groups or multiple base bipolar transistors. According to the method, the interconnect between e.g. the source contacts (5,6) is not produced by air bridge structures, but by etching vias (11) through the semiconductor layer (2) directly to the ohmic contacts and applying a contact layer (13) on the backside of the device.