| 摘要 |
A semiconductor memory device is provided to improve the reliability of data access operation of the semiconductor memory device, by enabling a data signal outputted from all cell blocks in one bank to be transmitted to a data amplification circuit. A bit line sense amplifier(202) senses and amplifies a data signal applied to a bit line. A first local line(LIO,/LIO) transmits the data signal amplified by the bit line sense amplifier. A small signal amplifier(210A) amplifies the data signal transmitted by the first local line. A second local line(DIO,/DIO) transmits the data signal sensed and amplified by the small signal amplifier. A data amplification circuit(206) senses and amplifies the data signal transmitted to the second local line.
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