| 摘要 |
A defect detection method is disclosed, in which the method includes: providing a semiconductor sample, wherein the semiconductor sample comprises at least one defect; utilizing a failure analysis for detecting at least one suspected area on the backside of the semiconductor sample; utilizing a physical energy for forming a plurality of reference marks around the suspected area on the backside of the semiconductor sample; and utilizing the reference marks for determining the relative location of the defect on the front side of the semiconductor sample.
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