发明名称 |
Method and device for measuring wafer potential or temperature |
摘要 |
The present invention attracts a wafer 6 , placed on a susceptor 5 , toward the susceptor 5 by the electrostatic attractive power of an electrostatic chuck electrode 7 , varies the output voltage of a variable direct current power source 23 for the electrostatic chuck electrode 7 while measuring the temperature of the wafer 6 by a temperature detection sensor 21 ; and detects the potential of the wafer 6 based on the output voltage of the variable direct current power source 23 at a time when the temperature of the wafer 6 peaks.
|
申请公布号 |
US7335315(B2) |
申请公布日期 |
2008.02.26 |
申请号 |
US20040513396 |
申请日期 |
2004.11.04 |
申请人 |
MITSUBISHI HEAVY INDUSTRIES, LTD. |
发明人 |
MATSUDA RYUICHI;KAWANO YUICHI;INOUE MASAHIKO |
分类号 |
G01L21/30;H01L21/00;H01L21/683 |
主分类号 |
G01L21/30 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|