发明名称 Method and device for measuring wafer potential or temperature
摘要 The present invention attracts a wafer 6 , placed on a susceptor 5 , toward the susceptor 5 by the electrostatic attractive power of an electrostatic chuck electrode 7 , varies the output voltage of a variable direct current power source 23 for the electrostatic chuck electrode 7 while measuring the temperature of the wafer 6 by a temperature detection sensor 21 ; and detects the potential of the wafer 6 based on the output voltage of the variable direct current power source 23 at a time when the temperature of the wafer 6 peaks.
申请公布号 US7335315(B2) 申请公布日期 2008.02.26
申请号 US20040513396 申请日期 2004.11.04
申请人 MITSUBISHI HEAVY INDUSTRIES, LTD. 发明人 MATSUDA RYUICHI;KAWANO YUICHI;INOUE MASAHIKO
分类号 G01L21/30;H01L21/00;H01L21/683 主分类号 G01L21/30
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