PACKAGELESS SILICONE MICROWAVE P-I-N DIODE

摘要

A packageless silicon microwave p-i-p diode consists of a silicon crystal from high-resistance semiconductive plate, which made as a chip, a side surface of p-n chip transition made using etching method in transition of p-n ring structure of selected depth in the form of three-stage sphere. At side surface of p-i-p diode it is created a protective lay of dielectric coating, the depth of which is not excided 1 mkm, the total depth of etched rings are not more than ¼ of diode base lay depth.