发明名称 Temperature Regulating Method, Thermal Processing System and Semiconductor Device Manufacturing Method
摘要 A temperature regulating method in a thermal processing system has heating means for heating an interior of a process chamber to process a substrate, a heating control section for controlling the heating means, and first and second temperature detecting means for detecting a temperature in the process chamber. The first temperature detecting means is arranged in a position closer to the substrate than the second temperature detecting means while the second temperature detecting means is arranged in a position closer to the heating means than the first temperature detecting means. The temperature regulating method includes a first step of controlling the heating means by performing integral operation, differential operation and proportional operation by means of the heating control section in a manner a detection temperature by the temperature detecting means becomes a predetermined target temperature, a second step of determining a first output control pattern by patterning a first operation amount for the heating control section to control the heating means depending upon a detection temperature detected by the first temperature detecting means, in controlling the heating means in the first step, a third step of controlling the heating means by means of the heating control section depending upon the first output control pattern determined in the second step, and a fourth step of determining a second output control pattern by patterning at least a part of a second operation amount for the heating control section to control the heating means depending upon a detection temperature detected by the second temperature detecting means, in controlling the heating means in the third step.
申请公布号 US2008046110(A1) 申请公布日期 2008.02.21
申请号 US20050663198 申请日期 2005.11.28
申请人 HITACHI KOKUSAI ELECTRIC INC. 发明人 SUGISHITA MASASHI;UENO MASAAKI
分类号 G05D23/00;G05D23/19;H01L21/205;H01L21/22;H01L21/324 主分类号 G05D23/00
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