| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor storage device with which information of a memory cell can be discriminated accurately, even if the distribution gap of cell current values of data 0 and data 1 of a plurality of memory cells in the memory cell array is very narrow, or if overlapped state of the distribution takes place. <P>SOLUTION: The first memory cell MC 11 and the second memory cell MC 12 are arranged adjacent to each other, and a first bit line BL1 to which the first input/output terminal of the first memory cell MC 11 is connected, and a second bit line BL2 to which the second input/output terminal of the second memory cell MC 12 is connected, are connected to each input of sense amplifiers SA1, respectively. The second input/output terminal of the first memory cell MC 11 and the first input/output terminal of the second memory cell MC 12 are connected to a common line COM. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
