LIQUID PHASE GENERATION METHOD OF SINGLE CRYSTAL SILICON CARBIDE SEED CRYSTAL, SINGLE CRYSTAL SILICON CARBIDE SEED CRYSTAL, LIQUID PHASE EPITAXIAL GENERATION METHOD OF SINGLE CRYSTAL SILICON CARBIDE SEED CRYSTAL PLATE, SINGLE CRYSTAL SILICON CARBIDE SEED CRYSTAL PLATE, GENERATION METHOD OF SINGLE CRYSTAL SILICON CARBIDE SEED CRYSTAL SUBSTRATE AND SINGLE CRYSTAL SILICON CARBIDE SEED CRYSTAL SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To generate small pieces of single crystal silicon carbide seed crystals by allowing a single crystal silicon carbide seed crystal to self-grow by using a polycrystalline silicon carbide substrate. SOLUTION: A polycrystalline silicone carbide substrate 5 is placed adjacently opposite to a carbonized face 11 of another polycrystalline silicon carbide substrate 5 subjected to carbonization, a metal silicon melt 12 is made present in a gap between the substrates to induce liquid phase epitaxial growth so that a single crystal silicon carbide seed crystal self-grows on the surface of the carbonized polycrystalline silicon carbide substrate 5 to generate a plurality of small pieces 13a of the single crystal silicon carbide seed crystal 13a. COPYRIGHT: (C)2008,JPO&INPIT