发明名称 FABRICATING CMOS IMAGE SENSOR
摘要 A fabrication method of a CMOS image sensor provides forms micro lenses over a substrate by etching a plurality of holes in a wiring layer over a pixel area. An oxide layer is deposited to form a surface with a semi-circular cross section over the holes. The oxide layer may be etched away, leaving micro lenses formed in the wiring layer.
申请公布号 US2008044941(A1) 申请公布日期 2008.02.21
申请号 US20070840065 申请日期 2007.08.16
申请人 PARK JEONG-SU 发明人 PARK JEONG-SU
分类号 H01L21/02 主分类号 H01L21/02
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