| 摘要 |
PROBLEM TO BE SOLVED: To hardly cause side etching to a semiconductor thin film made of a zinc oxide which is to be pattern formed. SOLUTION: The semiconductor thin film 2 made of a zinc oxide is formed on the top face of a substrate 1, and an ultraviolet light shielding film 3 made of a metal is pattern formed on the semiconductor thin film 2. Then, irradiating with ultraviolet rays, the semiconductor thin film 2 is wet etched with the ultraviolet light shielding film 3 as a mask. In this case, etching of the semiconductor thin film 2 in other region than near the ultraviolet light shielding film 3 goes on averagely, whether or not being irradiated with ultraviolet light, however, etching of the semiconductor thin film 2 near the ultraviolet light shielding film 3 goes on more rapidly which is a cause for relatively large side etching. However, since the etch rate of the region irradiated with ultraviolet light is higher than that of the region not irradiated with ultraviolet light, the etch rate of the region not irradiated with ultraviolet light is lower than that of the region irradiated with ultraviolet light, hardly causing side etching to the semiconductor thin film 2 below the ultraviolet light shielding film 3. COPYRIGHT: (C)2008,JPO&INPIT
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