| 摘要 |
A method for anisotropically plasma etching a semiconductor wafer is disclosed. The method comprises supporting a wafer in an environment operative to form a plasma, such as a plasma reactor, and providing an etching mixture to the environment. The etching mixture comprises at least one etch component for etching the wafer; at least one passivation component for depositing passivation material on the wafer; and at least one passivation material removal component for removing passivation material deposited on the wafer. A plasma of the etching mixture is formed in the environment for etching the wafer. |
