发明名称 |
Apparatus for pulse testing a MRAM device and method therefore |
摘要 |
Methods and apparatus are provided for testing a magnetoresistive random access memory (MRAM). A magnetoresistive tunnel junction (MTJ) has a first terminal, a second terminal, and a third terminal. A source measuring unit is coupled to a first terminal of a MTJ to provide DC biasing. A current preamp has an input coupled to a third terminal of the MTJ for receiving current corresponding to a resistance of the MTJ. A pulse generator is AC coupled to the MTJ for programming the MTJ. A method of insitu testing a MTJ in a manufacturing environment uses a probe station coupled to the MTJ. A probe station couples to the MTJ. The MTJ is DC biased for generating a current corresponding to the logic level stored in the MTJ. A pulse for programming the MTJ is AC coupled to the MTJ.
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申请公布号 |
US7333360(B2) |
申请公布日期 |
2008.02.19 |
申请号 |
US20030746014 |
申请日期 |
2003.12.23 |
申请人 |
FREESCALE SEMICONDUCTOR, INC. |
发明人 |
DEHERRERA MARK;RIZZO NICHOLAS |
分类号 |
G11C11/15;G11C29/50;G11C29/56;H01L31/072 |
主分类号 |
G11C11/15 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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