| 摘要 |
A semiconductor device is provided which is capable of preventing a constitutional material of a diffusion barrier layer from diffusing into a bottom electrode during a high thermal process and of preventing an increase in contact resistance of a contact plug by suppressing mutual diffusions of the constitutional material of the diffusion barrier layer and the contact plug and a method for fabricating the same. The semiconductor device includes a bottom electrode of a capacitor connecting to a substrate through a contact plug; a first diffusion barrier layer disposed on the contact plug, wherein the first diffusion barrier contains Cr therein for preventing mutual diffusions between the bottom electrode and the contact plug; and a second diffusion barrier on the first diffusion barrier for preventing the Cr in the first diffusion layer from diffusing into the bottom electrode; a dielectric layer disposed on the bottom electrode and a top electrode disposed on the dielectric layer.
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