| 摘要 |
PROBLEM TO BE SOLVED: To improve the problem of reduction of the lifetime of a compound semiconductor element in annealing process. SOLUTION: The manufacturing method of the compound semiconductor element includes a process sequence for applying heat treatment at a heat treatment temperature in the range of 350 to 430°C, after electrodes 17, 19 containing Pt (platinum) and Ti (titanium) are formed in a compound semiconductor wafer 1 that contains Ga (gallium) or In (indium) or a compound semiconductor layer 15 containing Ga or In. COPYRIGHT: (C)2008,JPO&INPIT
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