METHOD AND SYSTEM FOR MANUFACTURING SEMICONDUCTOR DEVICE, COMPUTER STORAGE MEDIUM, AND STORAGE MEDIUM STORING TREATMENT RECIPE THEREON

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing semiconductor devices by which harmful effects due to residues of deteriorated layer formed in a metal film during a wet etching process on subsequent processes and on device characteristics can be reduced, and high-quality semiconductor devices can be stably manufactured when it has a process for wet etching the metal film and a process for dry etching the metal film afterward. SOLUTION: After wet etching the metal film 106, n+a-Si film 105 and an a-Si film 104 are dry etched. Then after half-ashing a resist mask 107 formed with bumps, an altered layer removing process is performed for removing an altered layer 108. After that, the metal film 106 and the like is dry etched. COPYRIGHT: (C)2008,JPO&INPIT