Polymeer voor immersielithografie, fotoresistsamenstelling dit bevat, werkwijze voor de bereiding van een halfgeleiderapparaat, en halfgeleiderapparaat.

摘要

A polymer for immersion lithography comprising a repeating unit represented by Formula 1 and a photoresist composition containing the same. A photoresist film formed by the photoresist composition of the invention is highly resistant to dissolution, a photoacid generator in an aqueous solution for immersion lithography, thereby preventing contamination of an exposure lens and deformation of the photoresist pattern by exposure.