发明名称 |
HIGHER ORDER SILANE COMPOUND AND METHOD FOR FORMING THIN FILM |
摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming a uniform germanium-doped silicon conductive film on a substrate by a coating method under ordinary pressure, and to provide a method for producing a phosphorus atom-containing higher order silane compound therefor. SOLUTION: A method for producing a germanium atom-containing higher order silane compound comprises irradiating a solution containing a photopolymerizable silane compound and a germanium compound with a ray having a longer wavelength than 400 nm to form the germanium atom-containing higher order silane compound. A method for forming a germanium-containing silicon film comprises coating the solution containing the germanium atom-containing higher order silane compound obtained by the above method on a substrate and heat-treating the coated substrate. COPYRIGHT: (C)2008,JPO&INPIT
|
申请公布号 |
JP2008031202(A) |
申请公布日期 |
2008.02.14 |
申请号 |
JP20060203109 |
申请日期 |
2006.07.26 |
申请人 |
JSR CORP |
发明人 |
IWAZAWA HARUO;MATSUKI YASUO;O DOUKAI |
分类号 |
C08G77/60;C07F7/02;C07F7/30;C07F19/00;H01L21/208 |
主分类号 |
C08G77/60 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|